Advances in Electronics and Electron Physics, Vol. 70 by Peter W. Hawkes (Ed.)

By Peter W. Hawkes (Ed.)

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Example text

The straight line marked I , represents the normal tunneling characteristic. / I / Load line \ V FIG. 18. Pair-tunneling current at zero voltage. If its maximum value Imax is exceeded, the junction switches along the load line to the voltage state on the quasiparticle tunneling characteristic. The straight line marked I , represents the normal tunneling characteristic. SCANNING ELECTRON MICROSCOPY AT VERY LOW TEMPERATURES 29 It is the resistive nonlinear quasiparticle IVC which is attained by the junction if the total maximum Josephson current I,,, discussed in Section V is exceeded.

A)Sample geometry and location of the hotspot (hatched area). (b) Temperature profile along the sample. (c) Electron-beam induced voltage signal S V ( x ) versus the sample coordinate. system. Qualitatively, the origin of the voltage signal marking the hotspot boundaries can be understood as follows. If the electron beam is scanned over the total length of the sample, the beam-induced local temperature increment causes a small increase in the electric sample resistance resulting in a voltage signal 6 V ( x ,y) only near the location where the temperature profile passes through the value T,.

2 K. (From Bosch, 1986). It is distinctly different from that expected for quasiparticle tunneling and displayed in Figs. 17 and 18. An SEM micrograph of the junction is shown in Fig. 25(c). The beam-induced critical current change - &(y) as a function of the y-coordinate in the direction of the long junction dimension is shown in Fig. 25(a). This change is proportional to the local critical current density in the unperturbed junction. The junction was scanned along a single line (at a fixed value of the x coordinate).

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